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投稿时间:2023-04-27 修订日期:2023-06-04
投稿时间:2023-04-27 修订日期:2023-06-04
中文摘要: 通过原位化学气相沉积(CVD)技术,在铜粉上包覆石墨烯,再通过真空热压技术制备出石墨烯/铜合金。研究表明:铜晶粒表面包覆了高质量的石墨烯。在铜粉表面原位生长的石墨烯均匀分散在铜晶粒的晶界处,而且石墨烯的含量低,只占0.04 %(质量分数)。石墨烯/铜合金具有高的导电性能,导电率高达97%IACS。同时,石墨烯/铜合金的摩擦系数降低到0.46,与铜相比降低了38.7%。石墨烯/铜合金的磨损率降低到2.09×10-4 mm3(/ N?m),与铜相比降低了68.6%。
Abstract:Copper powder was coated with graphene by in situ chemical vapor deposition (CVD), and graphene/copper alloy was formed by vacuum hot pressing technology. The results showed that the surface of copper grain was coated with high quality graphene. The graphene grown on the surface of copper powder is evenly dispersed in the grain boundaries of copper grains. And the content of graphene was low, only 0.04%(mass fraction). Graphene/copper alloys had high electrical conductivity, up to 97%IACS. At the same time, the friction coefficient of graphene/copper alloy was reduced to 0.46, which was 38.7% lower than that of copper. The wear rate of graphene/copper alloy was reduced to 2.09×10-4 mm3/(N?m), which was 68.6% lower than that of copper.
文章编号:20230427001 中图分类号:TG135+.6
基金项目:STS计划配套院市合作项目(2020HJSTS010);国家重点研发项目(2022YFB3706602)
引用文本:
戴丹,杨科,叶辰,虞锦洪,邓丽芬,李惠敏,江南,林正得.化学气相沉积石墨烯/铜合金制备与导电、耐磨性能研究[J].铜业工程,2023,(4):78-84


