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投稿时间:2025-03-14 修订日期:2025-04-16
投稿时间:2025-03-14 修订日期:2025-04-16
中文摘要: 高纯金(Au)及金靶材是集成电路和半导体芯片制造的关键基础材料,主要用于高端芯片金属化系统及先进封装。为保障中国高端芯片的供应链安全,中国企业正不断加强高纯金及金靶材制备技术的研发与产业化。本文介绍了半导体芯片用高纯金及金靶材的技术要求和制备难点,综述了国内外高纯金及金靶材制备工艺和研究进展,对各方法优缺点进行了分析。对于高纯金的制备:直接化学还原法流程短、效率高,但产品质量不稳定;溶剂萃取-还原法质量稳定、纯度高,但污染严重;电解法质量好、纯度高、成本低,但生产周期长。金靶材制备方法主要为熔炼-热机械处理法,该方法得到的产品平均晶粒尺寸小于100 μm。制备满足半导体芯片用高纯金及金靶材,必须结合各提纯工艺的优点,采用多种方法联合工艺,才能稳定脱除特定杂质,满足半导体用高纯金的要求。
Abstract:High-purity gold (Au) and gold targets are among the fundamental raw materials for integrated circuit and semiconductor chip manufacturing, primarily used in metallization systems of high-end chips and advanced packaging. In order to protect the supply chain security of China's high-end chips, Chinese enterprises are constantly devoted to the research and development and industrialization of high-purity gold and gold target preparation technology. This paper outlined the technical requirements and preparation challenges of high-purity gold and gold targets for semiconductor applications, providing an overview of global preparation technologies and research advancements, and analyzed the advantages and disadvantages of various methods. In the preparation of high-purity gold, the direct chemical reduction method features short processing flow and high efficiency but suffers from unstable product quality. The solvent extraction-reduction method ensures stable quality and high purity yet causes severe environmental pollution. The electrolysis method delivers high quality and purity with low cost but requires extended production cycles. The primary method for preparing gold targets was the melting-thermomechanical processing method, which achieved an average grain size of less than 100 μm in the resulting products. The preparation of high purity gold and gold target for semiconductor chips must be combined with the advantages of various purification processes and adopt a variety of combined processes in order to stably remove specific impurities and meet the high purity gold standard for semiconductors.
keywords: semiconductor high-purity gold target material reduction method solvent extraction electrolysis
文章编号:20250314001 中图分类号:TG146.3+1
基金项目:广西重点研发计划项目(桂科AB25069474);中国有色集团科技计划项目(2022KJJH08)
引用文本:
宁瑞,刘志中,马登峰,李伟,陈松,尹延西.高纯金及金靶材制备工艺研究进展[J].铜业工程,2025,(6):73-84


