Abstract:Depletion of high-grade ore deposits, coupled with growing difficulty of separating low-grade ores, has exposed critical shortcomings in current ore separation technologies: sluggish response, high energy consumption, and elevated noise at room temperature. The advent of third-generation semiconductors has positioned Cd1-xZnxTe (0≤x≤1, abbreviated as CZT) as a highly efficient detector material. Leveraging an innovative single-step conversion mechanism, Cd1-xZnxTe (0≤x≤1) detectors directly transduce high-energy radiation into charge signals, enabling precise determination of energy, position and time. This paper provided a comprehensive survey of worldwide research on Cd1-xZnxTe (0≤x≤1) crystals, systematically comparing the merits and drawbacks of various growth techniques. Detailed assessments were presented on controlling compositional uniformity, managing the solid-liquid interface, and eliminating—or at least mitigating—bulk and surface defects. Building on these analyses, the outlook for future applications and development trajectories of Cd1-xZnxTe (0≤x≤1) crystals was discussed.